Related papers: Sensitivity of spin-torque diodes for frequency-tu…
Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
We have constructed a microwave detector based on the voltage switching of an underdamped Josephson junction, that is positioned at a current antinode of a {\lambda}/4 coplanar waveguide resonator. By measuring the switching current and the…
Magnetic field measurement including a temperature compensation is essential for a magnetic field sensor. This study investigates a magnetic surface acoustic wave (MSAW) sensor in a reflective delay line configuration with two acoustic…
Subjecting a magnetic tunnel junction (MTJ) to a spin current and/or electric voltage induces magnetic precession, which can reciprocally pump current through the circuit. This results in an ac impedance, which is sensitive to the magnetic…
We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer…
MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared…
We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
Non-conventional beyond-the-state-of-the-art signal processing schemes require parallelism, scalability, robustness and energy efficiency to meet the demands of complex data-driven applications. With further research, magnonic and…
We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675{\mu}m2. In the smaller area…
A spin-torque nano-oscillator (STNO) driven by a ramped bias current can perform spectrum analysis quickly over a wide frequency bandwidth. The STNO spectrum analyzer operates by injection locking to external microwave signals and produces…
We demonstrate field and current controlled magnetodynamics in nanocontact spin-torque nano-oscillators (STNOs) based on orthogonal magnetic tunnel junctions (MTJs). We systematically analyze the microwave properties (frequency $f$,…
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by…
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and…