Related papers: Microscopic origin of bipolar resistive switching …
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in two…
We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We…
Amorphous oxide thin films play a fundamental role in state-of-the art interferometry experiments, such as gravitational wave detectors where these films compose the high reflectance mirrors of end and input masses. The sensitivity of these…
Black TiO2 nanoparticles with a crystalline-core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanisms underlying these enhancements, however, remain unclear,…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related…
We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is…
Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 ${\mu}m$ diameter based on Ti/TiO2-NT/Au sandwich structures with an…
We present a novel method enabling precise post-fabrication modulation of the electrical resistance in micrometer-scale regions of amorphous indium oxide (a-InO$_x$) films. By subjecting initially insulating films to an electron beam at…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte…
Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control…
The complex admittance of metal/oxide/pentacene thin film junctions is investigated under ambient conditions. At low frequencies, a contribution attributed to proton diffusion through the oxide is seen. This diffusion is shown to be…
We present a study on the crystallization process of undoped and Ta doped TiO2 amorphous thin films. In particular, the effect of ultra-fast annealing treatments in environments characterized by different oxygen concentrations is…
It is shown that in nanoporous titanium dioxide films, sensitivity to atmospheric hydrogen exposure and electroforming can coexist and are interdependent. The devices work as conventional hydrogen sensors below a threshold electric field…
2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the…
We demonstrate switching behavior and quantized conductance at room temperature in percolating films of nanoparticles. Our experiments and complementary simulations show that switching and quantization result from formation of atomic scale…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed…
In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed.…