Related papers: Valley dependent many-body effects in 2D semicondu…
Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
We analyze the equilibrium transport properties of underscreened Kondo effect in the case of a two-level quantum dot coupled to ferromagnetic leads. Using the numerical renormalization group (NRG) method, we have determined the gate voltage…
In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective…
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…
Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing…
An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally…
We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $\nu=3$…
The application of a mechanical strain to a 2D material can create pseudo-magnetic fields and lead to a quantized valley Hall effect. However, measuring valley-resolved effects remains a challenging task due to their inherent fragility and…
We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe…
We present the theory of many-body corrections to cyclotron transition energies in graphene in strong magnetic field due to Coulomb interaction, considered in terms of the renormalized Fermi velocity. A particular emphasis is made on the…
We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse…
Electrostatic charging affects the many-body spectrum of Andreev states, yet its influence on their microwave properties has not been elucidated. We developed a circuit quantum electrodynamics probe that, in addition to transition…
We present detailed LDA'+DMFT investigation of doping dependence of correlation effects in novel K{1-x}Fe{2-y}Se2 superconductor. Calculations were performed at four different hole doping levels, starting from hypothetical stoichiometric…
Using many-body diagrammatic perturbation theory we consider carrier density- and substrate-dependent many-body renormalization of doped or gated graphene induced by Coulombic electron-electron interaction effects. We quantitatively…
This article develops a quantitative quasiparticle model of the low-temperature properties of d-wave superconductors which incorporates both Fermi-liquid effects and band-structure effects. The Fermi-liquid interaction effects are found to…
The density of low energy particle-hole excitations is non-analytic in a singular Fermi-liquid, but it is altered on entering a superconducting state in which, in the pure limit, it vanishes asymptotically at the chemical potential and in…
By means of a diagram technique for Hubbard operators we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g. quantum dot, modeled by the Anderson Hamiltonian with two conduction…
The quasi-two-dimensional organic semiconductor \alpha-(BEDT-TTF)2I3 [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene] has an anisotropic linear dispersion with a zero energy gap near the Fermi level. Owing to the vanishing density of states…
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be…