Related papers: Monolithic Pixel Sensors in Deep-Submicron SOI Tec…
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…
A system-on-chip (SoC) photonic-electronic linear-algebra accelerator with the features of wavelength-division-multiplexing (WDM) based broadband photodetections and high-dimensional matrix-inversion operations fabricated in advanced…
We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…
Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…
The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good…
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing…
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require…
Quantum sensing and imaging of magnetic fields has attracted broad interests due to its potential for high sensitivity and spatial resolution. Common systems used for quantum sensing require either optical excitation (e.g., nitrogen-vacancy…
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…
Metal-coated microsphere monolayers (MCM) are a class of plasmonic crystals consisting of noble metal films over arrays of self-assembled colloidal microspheres. Despite their ease of fabrication and tunable plasmonic response, their…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and…
The CLIC Tracker Detector (CLICTD) is a monolithic pixelated sensor chip produced in a $180$ nm imaging CMOS process built on a high-resistivity epitaxial layer. The chip, designed in the context of the CLIC tracking detector study,…
Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small…
A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…