Related papers: Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nano…
We present evidence of direct electron tunneling across intrinsic insulating regions in sub-micrometer wide bridges of the phase separated ferromagnet (La,Pr,Ca)MnO$_3$. Upon cooling below the Curie temperature, a predominantly…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…
We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn…
A spin-tunnel-junction based on manganites, with La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO$_3$ (LMO) as insulating barrier, is here theoretically discussed using double…
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel…
Transport properties of manganese oxides suggest that their colossal magnetoresistance (CMR) is due to percolation between ferromagnetic metallic (FM) clusters in an antiferromagnetic insulating (AFI) matrix. We have studied small-angle…
We present microscopic results on the giant tunneling magnetoresistance that arises from the nanoscale coexistence of ferromagnetic metallic (FMM) and antiferromagnetic insulating (AFI) clusters in a disordered two dimensional electron…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance…
The effect of low magnetic fields on the transport properties of a manganite compound with magnetic phase separation is studied. The different behavior obtained in samples of La0.5Ca0.5MnO3 related to the way in which the low field is…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…
Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585{\deg}C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were…
We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky…
The resistivity $\rho_{dc}$ of manganites is studied using a random-resistor-network, based on phase-separation between metallic and insulating domains. When percolation occurs, both as chemical composition and temperature vary, results in…
Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing…
Using low-temperature scanning laser microscopy we directly image electric transport in a magnetoresistive element, a manganite thin film intersected by a grain boundary (GB). Imaging at variable temperature allows reconstruction and…
The influence of ballistic channels superimposed on tunneling conduction channels in magnetic tunnel junctions has been studied in a manganese oxide based tunneling device. Inversion of magnetoresistance has been observed in magnetic tunnel…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…