Related papers: Pulse width controlled resistivity switching at ro…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
High pressure electrical resistance and x-ray diffraction measurements have been performed on ruthenium-doped Ba(Fe0.9Ru0.1)2As2, up to pressures of 32 GPa and down to temperatures of 10 K, using designer diamond anvils under…
We revisit the phenomenon of pulse nulling using high-quality single-pulse data of PSR B1133+16 from simultaneous multifrequency observations. Observations were made at 325, 610, 1400 and 4850 MHz as part of a joint program between the…
Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…
We have investigated the combined effects of a multiplicative noise and nonlinear conductivity on the charge density wave (CDW) dynamics of the quasi-one dimensional conductor Rb0.30MoO3. When the amplitude of a bipolar rectangular voltage…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
We report observation of electric-field-driven resistive transition at a characteristic threshold field $E_{th}(T)$ across a temperature range 10-200 K in an off-stoichiometric composite of (~80 vol%) W- and (~20 vol%) Z-type hexaferrites.…
Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported…
Measurements of the temperature dependence of the surface resistance at 3 GHz of 100 micron size grains of MgB_2 separated powder are presented and discussed. The microwave surface resistance data is compared to experimental results of Nb,…
The magnetic susceptibility and electrical resistivity of n-type BaTi{1-x}Nb{x}O3 have been measured over a wide temperature range. It is found that, for 0 < x < 0.2, dopant electrons form immobile spin singlet small bipolarons with binding…
An analytical theory of high voltage reverse-biased p+-n-n+-structures picosecond switching into conducting state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the results of…
We describe block oriented multidimensional pulse position modulation and its resilience against impulsive noise. The modulation implements the encoder and part of the decoder of the BBC algorithm. We tested the modulation on circuits that…
We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and…
Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned…
Magnetoimpedance, MI, change due to surface modification of the sensitive element caused by biofluids was studied with the aim of creating a robust sensor capable of separating the chemical surface modification from the sensing process. A…
Here, we describe the prototype for precisely scaled temperature assisted magnetic recording scheme utilizing the characteristics of thermo-remnant magnetization (TRM) in bulk SmCrO$_3$ as a memory media. The TRM response can be exploited…
The fundamental electrical and thermal properties of the devices consisting of SnxTe1-x/Sb2Te3 superlattice (SnTeSL) materials have been investigated and compared with those of the conventional Ge2Sb2Te5 (GST225) and GeTe/Sb2Te3…
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…