Picosecond switching of high voltage reverse-biased p+-n-n+-structures into conductive state by pulsed lighting
Other Condensed Matter
2017-10-26 v1
Abstract
An analytical theory of high voltage reverse-biased p+-n-n+-structures picosecond switching into conducting state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the results of theory and simulation allowed us to obtain a simple relation between the parameters of structure, light pulse, external circuit and main characteristics of the process - the load current pulse amplitude and duration of switching process.
Keywords
Cite
@article{arxiv.1403.8071,
title = {Picosecond switching of high voltage reverse-biased p+-n-n+-structures into conductive state by pulsed lighting},
author = {A. S. Kyuregyan},
journal= {arXiv preprint arXiv:1403.8071},
year = {2017}
}
Comments
12 pages, 8 figures, in Russian