Related papers: Pulse width controlled resistivity switching at ro…
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control…
We show that room temperature resistivity of Ba0.5Sr1.5Zn2Fe12O22 single crystals increases by more than three orders of magnitude upon being subjected to optimized heat treatments. The increase in the resistivity allows the determination…
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly…
Electric-field-dependent pulse measurements are reported in the charge-ordered state of alpha-(BEDT-TTF)2I3. At low electric fields up to about 50 V/cm only negligible deviations from Ohmic behavior can be identified with no threshold…
We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
Pulsed excitation of broad spectra requires very high field strengths if monochromatic pulses are used. If the corresponding high power is not available or not desirable, the pulses can be replaced by suitable low-power pulses that…
Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process…
Large bipolar strain of up to 0.36% (peak-to-peak value) was measured in BiFeO3 ceramics at low frequency (0.1 Hz) and large amplitude (140 kV/cm) of the driving field. This strain is comparable to that achievable in highly efficient…
Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…
The oscillatory reconnection mechanism is investigated for a parameter study of eight orders of magnitude of resistivity, with a particular interest in the evolution of the oscillating current density at the null point and its associated…
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum…
We report giant magnetoresistance up to 150 percent at low bias current and low temperature as well as room temperature magnetoresistance in polymeric spin-valves having the structure LSMO/conjugated polymer/Co. The conjugated polymers,…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T)…
A pulsed regime of short-cavity, heavily erbium-doped fiber lasers is of high interest for its possible applications in telecommunications and sensorics. Here, we demonstrate these lasers in two configurations, distributed feedback laser…
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…
We report active control of the friction force at the contact between a nanoscale asperity and a La$_{0.55}$Ca$_{0.45}$MnO$_3$ (LCMO) thin film using electric fields. We use friction force microscopy under ultrahigh vacuum conditions to…