The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is indicated by a change in the temperature co-efficient in the rho(T) data at ~36 K . However complete metallization in entire temperature range is seen at a P~5.8 GPa. High pressure XRD studies carried out at room temperature also shows an anomaly in the pressure versus volume curve around P ~ 5 GPa, without a change in crystal structure, indicative of an electronic transition. Further, a clear precipitous drop in rho(T) at ~17 K is seen for P ~5.8 GPa which suggests the possibility of the system going over to a superconducting ground state.
@article{arxiv.1110.4969,
title = {Pressure Induced Metallization of BaMn2As2},
author = {A. T. Satya and Awadhesh Mani and A. Arulraj and N. V. Chandra Shekar and K. Vinod and C. S. Sundar and A. Bharathi},
journal= {arXiv preprint arXiv:1110.4969},
year = {2015}
}
Comments
We provide first evidence of metallising the BaMn2As2, a G-type antiferromagnet (PRB, Rapid communications, accepted)