English
Related papers

Related papers: High Electron Mobility in Vacuum and Ambient for P…

200 papers

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature range between 175 K and 300 K. Upon cooling from room temperature to 175 K the…

Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by…

In highest quality organic single-crystal field-effect transistors, electron transport occurs in the band-like regime, with the carrier mobility increasing upon lowering temperature. Neither the microscopic nature of this regime, nor why it…

Materials Science · Physics 2016-03-01 Yulia Krupskaya , Marco Gibertini , Nicola Marzari , Alberto F. Morpurgo

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…

Mesoscale and Nanoscale Physics · Physics 2014-03-14 Subhamoy Ghatak , Atindra Nath Pal , Arindam Ghosh

In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carriers in such devices are expected to exhibit a higher…

Materials Science · Physics 2015-04-17 Vikash K. Singh , Digbijoy N. Nath

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of…

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In…

Other Condensed Matter · Physics 2009-11-11 R. W. I. de Boer , A. F. Stassen , M. F. Craciun , C. L. Mulder , A. Molinari , S. Rogge , A. F. Morpurgo

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…

Materials Science · Physics 2015-05-13 Alexandra Ford , Johnny Ho , Yu-Lun Chueh , Yu-Chih Tseng , Zhiyong Fan , Jing Guo , Jeffrey Bokor , Ali Javey

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

Mesoscale and Nanoscale Physics · Physics 2015-08-04 Binhui Hu , M. M. Yazdanpanah , B. E. Kane , E. H. Hwang , S. Das Sarma

We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…

Mesoscale and Nanoscale Physics · Physics 2016-12-21 Chenglei Guo , Zhen Tian , Yanjun Xiao , Qixi Mi , Jiamin Xue

We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 R. L. Willett , L. N. Pfeiffer , K. W. West

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent…

Mesoscale and Nanoscale Physics · Physics 2015-03-12 N. R. Pradhan , D. Rhodes , S. Memaran , J. M. Poumirol , D. Smirnov , S. Talapatra , S. Feng , N. Perea-Lopez , A. L. Elias , M. Terrones , P. M. Ajayan , L. Balicas

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field,…

Materials Science · Physics 2015-06-25 Vasili Perebeinos , J. Tersoff , Phaedon Avouris

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…

Mesoscale and Nanoscale Physics · Physics 2014-11-18 Xue Liu , Jin Hu , Chunlei Yue , Nicholas D. Della Fera , Yun Ling , Zhiqiang Mao , Jiang Wei

Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

Mesoscale and Nanoscale Physics · Physics 2013-06-25 Branimir Radisavljevic , Andras Kis

We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the…

Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is…

We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated…

Materials Science · Physics 2015-06-19 Lu Ma , Digbijoy N. Nath , Edwin W. Lee , Choong Hee Lee , Aaron Arehart , Siddharth Rajan , Yiying Wu