Related papers: Spin polarization of electron current through a po…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
We consider a thin-film normal metal/superconductor junction in the presence of an externally applied in-plane magnetic field for several symmetries of the superconducting order parameter. For p-wave superconductors, a strongly…
An existence of predominant symmetrical spin configuration (spin polarised phase) and "diluted" density of states (pseudo-gap) in a layer under the Fermi level in a quantum wire is predicted. The condition of cross-over from non-polarised…
We consider a gated one-dimensional (1D) quantum wire disturbed in a contactless manner by an alternating electric field produced by a tip of a scanning probe microscope. In this schematic 1D electrons are driven not by a pulling electric…
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…
In several situations of interest, spin polarization may be generated far from the boundaries of a sample by nonlinear effects of an electric current, even when such a generation is forbidden by symmetry in the linear regime. We present an…
We examine electron transport through semiconductor quantum dot subject to a continuous circularly polarized optical irradiation resonant to the electron - heavy hole transition. Electrons having certain spin polarization experience Rabi…
Atomically thin two-dimensional layer of honeycomb crystalline carbon known as graphene is a promising system for electronics. It has a point-like Fermi surface, which is very sensitive to external potentials. In particular, Zeeman magnetic…
We discuss spontaneous spin current generation from the vacuum by strong electric fields as a result of interplay between the Schwinger mechanism and a spin-orbit coupling. By considering a homogeneous slow strong electric field…
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…
Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of…
By applying Berry-phase theory for the effective half-filled Hubbard model, we derive an analytical expression for the electronic polarization driven by the relativistic spin-orbit (SO) coupling. The model itself is constructed in the…
Unlike the two-terminal device, in which the time-reversal invariant spin-orbit interaction alone cannot polarize the spins, such a polarization can be generated when electrons from one source reservoir flow into two (or more) separate…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
A pure spin current is predicted to occur when an external magnetic field and a linearly inhomogeneous spin-only field are appropriately aligned. Under these conditions (such as originate from nuclear contact hyperfine fields that do not…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
Spin-orbit interaction (SOI) has been a key tool to steer and manipulate spin-dependent transport properties in two-dimensional electron gases. Here we demonstrate how spin currents can be created and efficiently read out in nano- or…