Related papers: Spin relaxation in sub-monolayer and monolayer InA…
We investigate the influence of the Hartree-Fock self-energy, acting as an effective magnetic field, on the anomalous D'yakonov-Perel' spin relaxation in InAs (110) quantum wells when the magnetic field in the Voigt configuration is much…
The Dyakonov-Perel (DP) mechanism of spin relaxation has long been considered irrelevant in centrosymmetric systems since it was developed originally for non-centrosymmetric ones. We investigate whether this conventional understanding…
Andreev spin qubits are a new qubit platform that merges superconductivity with semiconductor physics. The mechanisms dominating observed energy relaxation remain unidentified. We report here on three steps taken to address these questions…
We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…
Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A3B5 semiconductors supplies not only holes, but also localized spins. The…
Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and…
We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenides in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the…
In order to describe correctly the interplay of extrinsic and intrinsic spin-orbit mechanisms to the spin Hall effect, it is necessary to consider different sources of spin relaxation. We take into account the spin relaxation time…
The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and…
We perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-typed GaAs (100) quantum wells for high temperatures ($\geq 120$ K) under moderate magnetic fields in the Voigt configuration by constructing and…
We comment on the conclusion by Ma et al. [Appl. Phys. Lett. {\bf 94}, 241112 (2009)] that the Elliott-Yafet mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk CdTe at room temperature.…
A formula for the electron spin relaxation rate of an electron-phonon system is derived using a new spring-loop diagram method. The result contains the distribution functions for the electrons and phonons properly. Therefore, all the spin…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
This work considers the g-tensor anisotropy induced by the flexural thermal vibrations in one-dimensional structures and its role in electron spin relaxation. In particular, the mechanism of spin-lattice relaxation via flexural modes is…
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$\mu$m by pump-probe Faraday rotation spectroscopy.…
Aiming to understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field induced by both adatoms and substrate, by means of the kinetic spin Bloch equation approach. The charged…
We have investigated spatio-temporal kinetics of electron spin polarization in semiconductor narrow 2D strip and explored the ability to manipulate spin relaxation. Information about spin of the conduction electrons and mechanisms of spin…
We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…
Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized…