Related papers: Spin relaxation in sub-monolayer and monolayer InA…
Optical pump-probe measurements of spin-dynamics at temperatures down to 1.5K are described for a series of (001)-oriented GaAs/AlGaAs quantum well samples containing high mobility two-dimensional electron gases (2DEGs). For well widths…
We present a numerical study of spin relaxation in a semiclassical electron ensemble in a large ballistic quantum dot. The dot is defined in a GaAs/AlGaAs heterojunction system with a two-dimensional electron gas, and relaxation occurs due…
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical properties are dominated by excitonic effects, we show that exciton-exciton interaction…
Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal…
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is…
We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the…
We investigate the electron spin relaxation of $n$-type InAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations with the relevant scattering explicitly included. We find that the quantum-wire size and…
Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in…
We study evolution of electron spin coherence having non-homogeneous direction of spin polarization vector in semiconductor heterostructures. It is found that the electron spin relaxation time due to the D'yakonov-Perel' relaxation…
We study spin relaxation in dilute magnetic semiconductors near a ferromagnetic transition, where spin fluctuations become strong. An enhancement in the scattering rate of itinerant carriers from the spin fluctuations of localized…
W. Apel and Yu.A. Bychkov have recently considered the spin relaxation in a 2D quantum Hall system for the filling factor close to unity [PRL v.82, 3324 (1999)]. The authors considered only one spin flip mechanism (direct spin-phonon…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…