Related papers: Electrically Controlled Magnetic Memory and Progra…
In a multi-terminal setup, when time-reversal symmetry is broken by a magnetic field, the heat flows can be managed by designing a device with programmable Boolean behavior. We show that such device can be used to implement operations like…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
The human brain has many remarkable information processing characteristics that deeply puzzle scientists and engineers. Among the most important and the most intriguing of these characteristics are the brain's broad universality as a…
Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Miniaturization is an essential element in the development of information processing technologies and is also one of the main determinants of the usability of the tested artificial neural networks. It is also a key element and one of the…
A moving magnetic domain wall produces an electromotive force (emf). It is therefore possible to read the state of a magnetic memory device via the emf it produces when subject to an interrogation pulse. It is also possible to amplify…
The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The…
Here it is proposed a three-dimensional plasmonic nonvolatile memory crossbar arrays that can ensure a dual-mode operation in electrical and optical domains. This can be realized through plasmonics that serves as a bridge between photonics…
The proximity-induced couplings in graphene due to the vicinity of a ferromagnetic insulator are analyzed. We combine general symmetry principles and simple tight-binding descriptions to consider different orientations of the magnetization.…
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of…
The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and…
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…
In this study, based on the self-energy method and the total energy calculation, the indirect exchange coupling between two semi-infinite ferromagnetic strips (FM electrodes) separated by metallic graphene nanoribbons (GNRs) is…
Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin…