Related papers: Electron spin relaxation in paramagnetic Ga(Mn)As …
Hole spin relaxation in $p$-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant. The…
In this work, the spin relaxation accompanying the spin diffusion in symmetric Si/SiGe quantum wells without the D'yakonov-Perel' spin-relaxation mechanism is calculated from a fully microscopic approach. The spin relaxation is caused by…
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by…
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic…
We suggest an approach to the problem of free electron spin evolution in a semiconductor with arbitrary anisotropy or quantum structure in a magnetic field. The developed approach utilizes quantum kinetic equations for average spin…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time…
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary…
The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
We investigate the electron spin relaxation of $n$-type InAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations with the relevant scattering explicitly included. We find that the quantum-wire size and…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence…
We present an investigation of electron-spin dynamics in p-doped bulk GaAs due to the electron-hole exchange interaction, aka the Bir-Aronov-Pikus mechanism. We discuss under which conditions a spin relaxation times for this mechanism is,…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along…
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…
Spin kinetics in $n$-type InAs quantum wells under intense terahertz laser fields is investigated by developing fully microscopic kinetic spin Bloch equations via the Floquet-Markov theory and the nonequilibrium Green's function approach,…
Spin-flip mechanism in Ag nanowires with MgO surface protection layers has been investigated by means of nonlocal spin valve measurements using Permalloy/Ag lateral spin valves. The spin flip events mediated by surface scattering are…
Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric field is investigated from the microscopic kinetic spin Bloch equation approach with the $\Gamma$ and $L$ valleys included. We show that the spin relaxation…