Related papers: Time-Resolved Measurements of the Interfacial Char…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
A general technique to investigate charge storage characteristics of conducting polymer films has been developed. A redox reaction is conducted on a polymer film on a rotating disk electrode under potentiostatic condition so that the rate…
We propose an equivalent circuit representation of the photogenerated charge separation and propagation in dye sensitized polycrystalline semiconductor in contact with a redox electrolyte. The suggested equivalent circuit for this type of…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
We describe a straight-forward method for determining the transfer function of the readout of a sensor for the situation in which the current transient of the sensor can be precisely simulated. The method relies on the convolution theorem…
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical…
Plasmonic catalysis is a rapidly growing field of research, both from experimental and computational perspectives. Experimental observations demonstrate an enhanced dissociation rate for molecules in the presence of plasmonic nanoparticles…
A kinetic model of the electron transfer at the electrode / electrolyte solution interface is developed, implemented in a Monte Carlo framework, and applied to simulate this process in idealised systems consisting of the primitive model of…
Identification of charge carrier separation processes in perovskite/silicon tandem solar cells and recombination at buried interfaces of charge selective contacts is crucial for photovoltaic research. Here, intensity- and wavelength-…
In stark contrast to the conventional charge density wave (CDW) materials, the one-dimensional CDW on the In/Si(111) surface exhibits immediate damping of the CDW oscillation during the photoinduced phase transition. Here, by successfully…
Metal oxide nanocrystals are emerging as extremely versatile material for addressing many of the current challenging demands of energy-conversion technology. Being able to exploit their full potential is not only an advantage but also a…
The role of charged centers in radiation-induced phenomena occurring in solid nitrogen irradiated with an electron beam was studied. The experiments were performed employing luminescence method and activation spectroscopy techniques -…
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
We present a method for probing the quantum capacitance associated with the Rydberg transition of surface electrons on liquid helium using radio-frequency (RF) reflectometry. Resonant microwave excitation of the Rydberg transition induces a…
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
Hybrid interfaces formed by inorganic semiconductors and organic molecules are intriguing materials for opto-electronics. Interfacial charge transfer is primarily responsible for their peculiar electronic structure and optical response.…