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Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…

Materials Science · Physics 2015-05-13 Matthew S. Marcus , J. M. Simmons , O. M. Castellini , R. J. Hamers , M. A. Eriksson

We present a general formalism of ultrafast diffractive voltammetry approach as a contact-free tool to investigate the ultrafast surface charge dynamics in nanostructured interfaces. As case studies, the photoinduced surface charging…

Chemical Physics · Physics 2015-06-17 Kiseok Chang , Ryan A. Murdick , Zhensheng Tao , Tzong-Ru T. Han , Chong-Yu Ruan

We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 K. MacLean , T. S. Mentzel , M. A. Kastner

The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…

Two preceding parts of a paper (cond-mat/0508457, cond-mat/0508460) considered the heuristic values of recent experiments pointing to the nearly universal occurrence of photovoltages across solid surfaces under short-circuit conditions.…

Materials Science · Physics 2007-06-27 O. Ivanov , Eugene Leyarovski , V. Lovchinov , Chr. Popov , M. Kamenova , M. Georgiev

We derive an explict bias dependent expression for electron transfer reaction rate from a solvated redox to a electrode through a bridged molecule of arbitrary length. The interaction of the solvated redox with the solvent is modelled as a…

Mesoscale and Nanoscale Physics · Physics 2010-09-02 A. V. B. Cruz , A. K. Mishra , W. Schmickler

We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…

Instrumentation and Detectors · Physics 2009-11-10 S. Bettarini , M. Bondioli , L. Bosisio , G. Calderini , C. Campagnari , S. Dittongo , F. Forti , M. A. Giorgi , G. Marchiori , G. Rizzo

Ta$_{3}$N$_{5}$ is among the most intensively studied photoanode materials for solar-driven water oxidation, yet its performance often remains limited by short carrier lifetimes and defect mediated recombination. Although transient…

We use coherent pump-probe spectroscopy to measure the photoinduced reflectivity \DeltaR, and complex dielectric function, {\delta}\in, of the electron-doped cuprate superconductor Nd_{2-x}Ce_xCuO_{4+\delta} at a value of x near optimal…

Superconductivity · Physics 2012-08-07 J. P. Hinton , J. D. Koralek , G. Yu , E. M. Motoyama , Y. M. Lu , A. Vishwanath , M. Greven , J. Orenstein

We report the site-specific probing of charge-transfer dynamics in a prototype system for organic photovoltaics (OPV) by picosecond time-resolved X-ray photoelectron spectroscopy. A layered system consisting of approximately two monolayers…

We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities…

Materials Science · Physics 2015-02-11 Fanqi Meng , Mark D. Thomson , Bo E. Sernelius , Michael Jörger , Hartmut G. Roskos

We consider electron transfer from a redox to an electrode through and adsorbed intermediate. The formalism is developed to cover all regimes of coverage factor, from lone adsorbate to monolayer regime. The randomness in the distribution of…

Mesoscale and Nanoscale Physics · Physics 2009-12-16 A. V. B. Cruz , A. K. Mishra , W. Schmickler

Time-resolved photoconductivity is widely used to characterize non-equilibrium charge-carrier lifetime, impurity content, and solar cell efficiency in a broad range of semiconductors. Most measurements are limited to the detection of…

Materials Science · Physics 2026-02-04 A. Bojtor , D. Krisztian , G. Parada , F. Korsos , S. Kollarics , G. Csosz , B. G. Markus , L. Forro , F. Simon

Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…

Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…

Instrumentation and Detectors · Physics 2025-05-21 Ingo Bloch , Ben Bruers , Heiko Lacker , Peilin Li , Ilona Ninca , Christian Scharf

Understanding the ultra-fast transport properties of hot charge carriers is of significant importance both fundamentally and technically in applications like solar cells and transistors. However, direct measurement of charge transport at…

Chemical Physics · Physics 2022-08-10 Peter A. Sloan , Kristina R. Rusimova

Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based…

The tunability of materials properties by light promises a wealth of future applications in energy conversion and information technology. Strongly correlated materials such as transition-metal dichalcogenides (TMDCs) offer optical control…

Materials Science · Physics 2023-07-10 Till Domröse , Thomas Danz , Sophie F. Schaible , Kai Rossnagel , Sergey V. Yalunin , Claus Ropers

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…

Instrumentation and Detectors · Physics 2020-01-08 R. Klanner , G. Kramberger , I. Mandic , M. Mikuz , M. Milovanovic , J. Schwandt

Phase Resolved Optical Emission Spectroscopy (PROES) measurements combined with 1d3v Particle-in-Cell/Monte Carlo Collisions (PIC/MCC) simulations are used to study the electron power absorption and excitation/ionization dynamics in…

Plasma Physics · Physics 2022-09-28 A. Derzsi , P. Hartmann , M. Vass , B. Horváth , M. Gyulai , I. Korolov , J. Schulze , Z. Donkó