Related papers: Tunnel Magnetoresistance of a Single-Molecule Junc…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…
The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We…
We have studied the Junction Magnetoresistance (JMR) and the Differential junction magnetoresistance (DJMR) for double tunnel junctions with magnetic metals in the Coulomb Blockade regime. Spikes are seen in both the JMR and the DJMR vs.…
We present an experimental and theoretical study of a magnetic single-molecule transistor based on N@C60 connected to gold electrodes. Particular attention is paid to the regime of intermediate molecule-lead coupling, where cotunneling…
We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
We propose an objective and robust method to extract the electrical conductance of single molecules connected to metal electrodes from a set of measured conductance data. Our method roots in the physics of tunneling and is tested on…
We do parametric calculations to elucidate multi-terminal electron transport properties through a molecular system where a single phenalenyl molecule is attached to semi-infinite one-dimensional metallic leads. A formalism based on the…
Electrical conduction through a two-terminal molecular device is studied using non-equilibrium Green's functions (NEGF) formalism. Such junction is made of a short linear wire which is connected to the metallic electrodes. Molecule itself…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
We present a complete theory of the spin torque phenomena in a ultrasmall nanomagnet coupled to non-collinear ferromagnetic electrodes through tunnelling junctions. This model system can be described by a simple microscopic model which…
Single molecular magnet (SMM) like paramagnetic molecules interacting with the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) produce a new system that differs dramatically from the properties of isolated molecules and…
Motivated by recent tunneling experiments in the parallel wire geometry, we calculate results for momentum resolved tunneling into a short one-dimensional wire, containing a small number of electrons. We derive some general theorems about…
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…