Related papers: Tunnel Magnetoresistance of a Single-Molecule Junc…
Electronic transport properties through some model quantum systems are re-visited. A simple tight-binding framework is given to describe the systems where all numerical calculations are made using the Green's function formalism. First, we…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
A quantum transport model incorporating spin scattering processes is presented using the non-equilibrium Green's function (NEGF) formalism within the self-consistent Born approximation. This model offers a unified approach by capturing the…
Tunneling of electrons through rotor-stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different…
Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI$_3$ by exploiting the…
We consider electrical transport through molecules with Heisenberg-coupled spins arranged in a ring structure in the presence of an easy-axis anisotropy. The molecules are coupled to two metallic leads and a gate. In the charged state of…
Electronic transport in a graphene-based ferromagnetic/normal/ferromagnetic junction is investigated by means of Landauer-B\"{u}ttiker formulism and the nonequilibrium Green's function technique. For the zigzag edge case, the results show…
The paper addresses inelastic spin-flip tunneling accompanied by surface spin excitations (magnons) in ferromagnetic junctions. The inelastic tunneling current is proportional to the magnon density of states which is energy-independent for…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…
Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the…
We present a self-consistent method for the evaluation of the electronic current flowing through a multi-terminal molecular wire. The method is based on Buttiker- Landauer theory which relates the current to one-electron scattering…
Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…
Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single molecule level may enable novel spintronic devices. Here we report…
We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…
Understanding how the mechanism of charge transport through molecular tunnel junctions depends on temperature is crucial to control electronic function in molecular electronic devices. With just a few systems investigated as a function of…
We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited…
This review presents recent results on the physics of electron transport in molecular devices. The review is organized as follows. A brief description of molecular junction (MJ) technology is first given followed by an introduction to the…
The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with…
Electron spin resonance (ESR) spectroscopy in scanning tunneling microscopy (STM) has enabled probing the electronic structure of single magnetic atoms and molecules on surfaces with unprecedented energy resolution, as well as demonstrating…
Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck…