Related papers: Mobility Extraction and Quantum Capacitance Impact…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
Using a linear array of voltage electrodes with a separation of several micrometers on a $20 $nm thick and 30 $\mu$m long multigraphene sample we show that the measured resistance does not follow the usual length dependence according to…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…
We discuss the fact that quantum capacitance of graphene-based devices leads to variation of it's charge density under changes of external magnetic field.The charge is conserved, but redistributes to substrate or other graphene sheet. We…
The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…
In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity…
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect…
The quantum capacitance of the monolayer graphene for arbitrary carrier density, magnetic field and temperature is found. The density dependence of the quantum capacitance is analyzed for magnetic field(temperature) is fixed(varied) and…
We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 - 100 nm and lateral size $\sim$ 2 $\mu$m are extracted from bulk. Mesoscopic graphite…
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…
We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…