Related papers: Ballistic Intrinsic Spin-Hall Effect in HgTe Nanos…

A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we…

We propose a theoretical investigation of the photonic spin Hall effect (PSHE) in a mid-infrared probe field by employing an asymmetric double AlGaAsGaAs quantum well as the intracavity medium. The system is designed such that an external…

We theoretically investigate an extrinsic spin Hall effect (SHE) in semiconductor heterostructures due to the scattering by an artificial potential created by antidot, STM tip, etc. The potential is electrically tunable. First, we formulate…

Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin…

We measure magnetic field dependence of the Hall angle in a metallic ferromagnetic nanomagnet with stable local magnetic moments where the adopted mechanisms of Hall effect predict linear plus a constant dependence on the external field…

We present a topological description of quantum spin Hall effect (QSHE) in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings. We show that the topology of the band insulator can be…

The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…

We show theoretically that both intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin…

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…

Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…

Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are…

Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (ITHE), where the noncoplanar spin textures of insulating…

We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained…

We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these…

We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated…

We report electrical detection of the dynamical part of the spin pumping current emitted during ferromagnetic resonance (FMR) using the inverse Spin Hall Effect (ISHE). The experiment is performed on a YIG$|$Pt bilayer. The choice of YIG, a…

We propose a multiterminal nanostructure for electrical probing of the quantum spin Hall effect (QSHE) in two-dimensional (2D) topological insulators. The device consists of a ferromagnetic (FM) island with precessing magnetization that…

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…

The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 {\mu}{\Omega}*cm by…

We study the intrinsic spin Hall effect (SHE) based on the orbitally degenerate periodic Anderson model, which is an effective model for heavy fermion systems. In the very low resistivity regime, the magnitude of the intrinsic spin Hall…