Related papers: Four switching categories for thin-film and bulk f…
The magnetic relaxation of ferromagnetic powders has been studied for many years, largely due to its importance to recording technologies. However, only recently have experiments been performed that resolve the magnetic state of individual…
Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…
We present the first analytical study of phase transitions in ferroelastic-ferroelectric epitaxial thin films on exactly solvable model. The emerging domain structure with domains of equal width (which may be exponentially large on a "soft"…
The surface spin wave branches in ferromagnetic films are studied using a microscopic theory which considers both magnetic dipole-dipole and Heisenberg exchange interactions. The dipole terms are expressed in a Hamiltonian formalism, and…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
An interacting electron liquid in two (2D) and three (3D) dimensions may undergo a paramagnetic-to-ferromagnetic quantum spin polarization transition at zero applied magnetic field, driven entirely by exchange interactions, as the system…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be…
A microscopic view of the response of the electric dipoles to a dynamic external field in a ferroelectric (FE) chain has been studied by two spin dynamics methods. One is the prominent micromagnetic approach, and the other is the…
We present a theoretical investigation of the anomalous ferroelectricity of mixed-stack charge transfer molecular crystals, based on the Peierls-Hubbard model, and first principles calculations for its parameterization. This approach is…
Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently,…
Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed…
An effective field theory is derived for the ferromagnetic transition of diffusive electrons at T=0. The static disorder which leads to diffusive electron dynamics induces an effective long-range interaction between the spins of the form…
Proton-transfer type molecular ferroelectrics hold great application potential due to their large spontaneous polarizations, high Curie temperatures, and small switching fields. However, it is puzzling that preparation of quasi-2D films…
Sliding ferroelectricity was originally proposed to elucidate the out-of-plane polarization generated by a specific stacking arrangement of non-polar van der Waals layers. However, the concept of sliding ferroelectricity can be generalized…
We simulate antiferromagnetic thin films. Dipole-dipole and antiferromagnetic exchange interactions as well as uniaxial and quadrupolar anisotropies are taken into account. Various phases unfold as the corresponding parameters, J, D and C,…
Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and…
HfO$_{2}$-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal…
The evolution of tetragonality with thickness has been probed in epitaxial c-axis oriented PbTiO3 films with thicknesses ranging from 500 down to 24 Angstroms. High resolution x-ray pointed out a systematic decrease of the c-axis lattice…