Related papers: Diameter-Dependent Electron Mobility of InAs Nanow…
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…
We present an empirical model for the nearballistic transport in carbon nanotube (CNT) transistors used as strain sensors. This model describes the intrinsic effect of strain on the transport in CNTs by taking into account phonon scattering…
We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without saturation down to 20 mK. Here we show, that the conductivity…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is…
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…
We review a series of works describing thermoelectric effects in gated disordered nanowires (field effect transistor device configuration). After considering the elastic coherent regime characterizing sub-Kelvin temperatures, we study the…
Single crystals of intermetallic Re$_3$Ge$_7$ were grown and characterized by measuring magnetization, electrical resistivity, Hall coefficient, and specific heat. Magnetization measurements show the material is weakly diamagnetic. A phase…
Electron transport studies for AlGaN/GaN two-dimensional electron gases is presented. Novel defects in the III-V nitrides are treated theoretically for two-dimensional transport. Theory of electron scattering by charged dislocation lines is…
Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition…
Electronic transport properties of carbon nanotubes are studied theoretically in the presence of external electric field E(t) by using the Boltzmann's transport with constant relaxation time. An analytical expression for the current…
We present a study of electronic transport in individual Bi nanowires of large diameter relative to the Fermi wavelength. Measurements of the resistance and thermopower of intrinsic and Sn-doped Bi wires with various wire diameters, ranging…
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…
We report on thermal transport properties in 2 and 3 dimensions interconnected nanowire networks (strings and nodes). The thermal conductivity of these nanostructures decreases in increasing the distance of the nodes, reaching ultra-low…
We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the…
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled…
We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of…
We report on thermal transport properties of wurtzite GaN in the presence of dislocations, by using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration were analyzed and found to reduce…
High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the…