Related papers: Diameter-Dependent Electron Mobility of InAs Nanow…
We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited…
Atomic-scale charge transport properties are not only of significant fundamental interest but also highly relevant for numerous technical applications. However, experimental methods which are capable of detecting charge transport at the…
Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene…
We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical…
While methods based on density-functional perturbation theory have dramatically improved our understanding of electron-phonon contributions to transport in materials, methods for accurately capturing electron-electron scattering relevant to…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished…
Fundamental understanding of ionic transport at the nanoscale is essential for developing biosensors based on nanopore technology and new generation high-performance nanofiltration membranes for separation and purification applications. We…
Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essential for their future applications in nanoelectronics, and thus…
We consider electronic transport through a suspended voltage-biased nanowire. By coupling the tunneling current to a transverse magnetic field, vibrational modes of the wire are excited which influences the current-voltage characteristics…
The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature range between 175 K and 300 K. Upon cooling from room temperature to 175 K the…
The transport properties of nematic aerogels, which consist of highly oriented Al$_2$O$_3\cdot$SiO$_2$ nanofibers coated with a graphene shell with a large number of defects, are studied. The temperature dependences of the electrical…
We have measured electron transport in small bundles of identical conducting Molybdenum Selenide nanowires where the number of weakly interacting one-dimensional chains ranges from 1-300. The linear conductance and current in these…
The present-day nanodevice dimensions continuously shrink, with the aim to prolong Moore's law. As downsizing meticulously persists, undesirable dynamic defects, which cause low-frequency noise and structural instability, play detrimental…
Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures are calculated…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the…
Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nanoscale is discussed by defining two related quantities, the…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the…