Related papers: Independent magnetization behavior of a ferromagne…
Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving…
Vision of ferromagnet/semiconductor hybrid as a strongly coupled but flexible spin system is presented. We analyze the experiments and argue that contrary to the common sense the nonmagnetic semiconductor plays a crucial role in…
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use…
Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin…
We consider a mesoscopic mechanism of the exchange interaction in a system of alternating ferromagnetic/nonmagnetic metallic layers. In the case of small mesoscopic samples the sign and the amplitude of the exchange energy turn out to be…
The influence of random interlayer exchange on the phase states of the simplest magnetic heterostructure consisting of two ferromagnetic Ising layers with large interaction radius is studied. It is shown that such system can exist in three…
In a diluted magnetic semiconductor system, the exchange interaction between magnetic impurities has two independent components: a direct antiferromagnetic interaction and a ferromagnetic interaction mediated by charge carriers. Depending…
Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this…
Van der Waals magnets are uniquely positioned at the intersection between two-dimensional materials, antiferromagnetic spintronics, and magnonics. The interlayer exchange interaction in these materials enables antiferromagnetic resonances…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…
The apparently inimical relationship between magnetism and superconductivity has come under increasing scrutiny in a wide range of material classes, where the free energy landscape conspires to bring them in close proximity to each other.…
We study the possibility of ferromagnetism in metals. The metal is described by two hybridized bands one of which includes Hubbard correlation whereas the other is uncorrelated. We parametrize the ratio of the band widths and their centers…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…
We theoretically study magnetoelectric effects in a heterostructure of a generic band insulator and a ferromagnet. In contrast to the kinetic magnetoelectric effect in metals, referred to as the Edelstein effect or the inverse spin galvanic…
Starting from microscopic and symmetry considerations, we derive the Hamiltonian describing the exchange interaction between the localized Mn spins and the valence band holes in $Ga_{1-x}Mn_x As$. We find that due to the strong spin-orbit…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
The magnetic phase diagram of the Mn-based semi-Heusler alloys is determined at T=0 using first-principles calculations in conjunction with the frozen-magnon approximation. We show that the magnetism in these systems strongly depends on the…
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…