Related papers: Mott transition between a spin-liquid insulator an…
The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T-dependence is observed for T < 50 K, which is either metallic, or insulating,…
Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice,…
Finding microscopic models for metallic states that exhibit quantum critical properties such as $\omega/T$ scaling is a major theoretical challenge. We calculate the local dynamical spin susceptibility $\chi(T,\omega)$ for a Hubbard model…
A single-site dynamical mean field study of a three band model with the rotationally invariant interactions appropriate to the t_2g levels of a transition metal oxide reveals a quantum phase transition between a paramagnetic metallic phase…
Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…
The metal-insulator transition (MIT) in paramagnetic VO2 is studied within LDA+DMFT(IPT), which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of the Coulomb U=5.0eV, we show how the…
We study a spinless two-band model at half-filling in the limit of infinite dimensions. The ground state of this model in the non-interacting limit is a band-insulator. We identify transitions to a metal and to a charge-Mott insulator,…
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott…
Electrons can organize themselves into charge-ordered states to minimize the effects of long-ranged Coulomb interactions. In the presence of a lattice, commensurability constraints lead to the emergence of incompressible Wigner-Mott…
Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
We show that the pressure-temperature phase diagram of the Mott insulator Ca$_{2}$RuO$_{4}$ features a metal-insulator transition at 0.5GPa: at 300K from paramagnetic insulator to paramagnetic quasi-two-dimensional metal; at $T \leq$ 12K…
In strongly correlated electronic systems, such as manganites, the global transport behavior depends sensitively on the spin ordering, whose alteration often requires a large external magnetic field. Here we show that the spin ordering in…
We present ultra-high-resolution dilatometric studies in magnetic fields on a quasi-two-dimensional organic conductor $\kappa$-(D8-BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is located close to the Mott metal-insulator (MI) transition. The…
The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…
The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…
A prototypical charge-transfer type Mott insulator NiS2 pyrite exhibits a metal-insulator transition with bandwidth control. Recent discoveries on surface-specific electronic states on other 3d transition-metal disulfide pyrites motivate us…
The single crystal VO2, exihibiting a first-order metal-insulator transition (MIT) at 67.2 degrees C and an insulator-insulator transition (IIT) at ~49.7 degrees C, is grown. From synchrotron-based x-ray microdiffraction analysis, the IIT…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering…
For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by…