Related papers: Electrically driven magnetization of diluted magne…
Electrostatic control of the magnetization of a normal mesoscopic conductor is analyzed in a hybrid superconductor-normal-superconductor system. This effect stems from the interplay between the non-equilibrium condition in the normal region…
Chemical pressure is an effective method to tune physical properties, particularly for diluted magnetic semiconductors (DMS) of which ferromagnetic ordering is mediated by charge carriers. Via substitution of smaller Ca for larger Sr, we…
We study energetic, magnetic, and electronic properties of diluted substitutional Mn-pairs on the reconstructed $(001)$ GaAs surfaces. The studies are based on first-principles calculations in the framework of the density functional theory.…
We investigate the dynamic nuclear polarization process by frequently injecting polarized electron spins into a quantum dot. Due to the suppression of the direct dipolar and indirect electron-mediated nuclear spin interactions, by the…
Ferromagnetic couplings in spin clusters are shown to be strongly enhanced compared to those for an ordered impurity arrangement, even for the same spin separation and hole doping. The consequent energy-enhancement of the cluster-localized…
A successful and promising device for the physical implementation of electron spin-valley based qubits is the Transition Metal Dichalcogenide monolayer (TMD-ML) semiconductor quantum dot. The electron spin in TMD-ML semiconductor quantum…
Using spin-1/2 description of valence holes and Kondo coupling between local spins and carriers, GaAs-based III-V diluted magnetic semiconductors (DMS)are studied in the coherent potential approximation(CPA). Our calculated relation of…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied…
We use muon spin relaxation (muSR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li1.15(Zn0.9Mn0.1)P with T_C ~ 22 K. MuSR results confirm the gradual development of ferromagnetic ordering…
We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…
The study of nuclear magnetic resonance and nuclear spin-lattice relaxation was conducted in an asymmetrically doped to $n\sim1.8\times10^{11}$ cm$^{-2}$ 16 nm AlAs quantum well grown in the $[001]$-direction. Dynamic polarization of…
We propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully…
Spins of charge carriers, paramagnetic centers, and nuclei in semiconductor structures are known to be oriented if circular-polarized light is shined upon the structure. This is due to transfer of angular momentum from photons to various…
We introduce a Heisenberg Hamiltonian for describing the magnetic properties of GaMnAs. Electronic degrees of freedom are integrated out leading to a pairwise interaction between Mn spins. Monte Carlo simulations in large systems are then…
The effects of carrier-impurity correlations due to a Kondo-like spin-spin interaction in diluted magnetic semiconductors are investigated. These correlations are not only responsible for a transfer of spins between the carriers and the…
Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make…
We investigate the current debate on the Mn valence in Ga$_{1-x}$Mn$_x$N, a diluted magnetic semiconductor (DMSs) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn…
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to…