Related papers: Electrically driven magnetization of diluted magne…

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…

We study the ferromagnetism of Ga1-xMnxAs by using a model Hamiltonian, based on an impurity band and the anti-ferromagnetic exchange interaction between the spins of Mn atoms and the charge carriers in the impurity band. Based on the mean…

The doping of semiconductors with magnetic impurities gives rise not only to a spin-spin interaction between quasi-free carriers and magnetic impurities, but also to a local spin-independent disorder potential for the carriers. Based on a…

We propose to use the spin-blockade regime in double quantum dots to reduce nuclear spin polarization fluctuations in analogy with optical Doppler cooling. The Overhauser shift brings electron levels in and out of resonance, creating…

We study spin transport of holes through stubless or stubbed waveguides modulated periodically by diluted magnetic semiconductor (DMS) sections of width b1 . Injected holes of up (down) spin feel a periodically modulated barrier (well)…

Because of large spatial separation of the Mn atoms in Heusler alloys the Mn 3d states belonging to different atoms do not overlap considerably. Therefore an indirect exchange interaction between Mn atoms should play a crucial role in the…

In diluted magnetic semiconductors, the carrier concentration and the magnetization of local moments are strongly coupled, since the magnetic interaction is mediated by the carriers. It is predicted that this coupling leads to an electric…

A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the…

We studied the zero-field dynamic nuclear spin polarization in a single In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dot. Even without any external magnetic field, the positive trion excited by the circularly-polarized light…

The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and…

Diluted magnetic semiconductors (DMS) have received much attention due to its potential applications to spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since 1990s. The simultaneous spin and charge doping via…

Motivated by recent measurements of electron paramagnetic resonance (EPR) spectra in modulation-doped CdMnTe quantum wells, [F.J. Teran {\it et al.}, Phys. Rev. Lett. {\bf 91}, 077201 (2003)], we develop a theory of collective spin…

We study the two-impurity Anderson model for a semiconductor host using the quantum Monte Carlo technique. We find that the impurity spins exhibit ferromagnetic correlations with a range which can be much more enhanced than in a half-filled…

A new diluted ferromagnetic semiconductor (Sr,Na)(Zn,Mn)2As2 is reported, in which charge and spin doping are decoupled via Sr/Na and Zn/Mn substitutions, respectively, being distinguished from classic (Ga,Mn)As where charge & spin doping…

We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds to discuss the dependence of the hole density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a function of…

The zinc-blende GaAs-based III-V diluted magnetic semiconductors (DMS)are studied in the coherent potential approximation(CPA). In this work, we use the exact Hilbert transformation of the face-centered cubic(fcc) density of states (DOS),…

The optically induced polarization of localized electron spins in an ensemble of quantum dots (QDs) dephases due to the interaction with the surrounding nuclear spins. Despite this dephasing, the spins in the QDs can be controlled to…

The continuous need for miniaturization and increase in device speed exerts pressureon the electronics industry to explore new avenues of information processing. One possibility is to use the spin to store, manipulate and carry information.…

Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga$_{1-x}$Mn$_x$As by using the coherent potential approximation (CPA).…

We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant…