Related papers: Modulation Doping of a Mott Quantum Well by a Prox…

The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening…

Neutron measurements on Ca{1-x}La{x}MnO3 (0.00 <= x <= 0.20) reveal the development of a liquid-like spatial distribution of magnetic droplets of average size ~10 Angstroms, the concentration of which is proportional to x (one cluster per…

We report the results of our investigation of magnetic, thermodynamic and dielectric properties of Ca substituted half-doped orthochromite, Dy0.6Ca0.4Fe0.5Cr0.5O3. Magnetic susceptibility and heat capacity data bring out that this compound…

We have calculated the linear magnetoconductance across a vertical parabolic Quantum Dot with a magnetic field in the direction of the current. Gate voltage and magnetic field are tuned at the degeneracy point between the occupancies N=2…

We report the successful synthesis of ZnO:Cu thin films doped with holes, resulting in room temperature ferromagnetism. Hole doping is achieved by As-diffusion from the GaAs substrate into ZnO films, assisted by thermal annealing. The…

Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence…

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…

The Weyl semimetallic compound Eu2Ir2O7 along with its hole doped derivatives (which is achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic and calorimetric studies. The metal-insulator…

We report hole-doping dependence of the in-plane resistivity \rho_{ab} in a cuprate superconductor La_{2-x}Sr_{x}CuO_{4}, carefully examined using a series of high-quality single crystals. Our detailed measurements find a tendency towards…

We carried out temperature-dependent (20 - 550 K) measurements of resonant inelastic X-ray scattering on LaCoO$_3$ to investigate the evolution of its electronic structure across the spin-state crossover. In combination with charge-transfer…

A family of models is proposed to describe the motion of holes in a fluctuating quantum dimer background on the square lattice. Following Castelnovo et al. [Ann. Phys. (NY) 318, 316 (2005)], a generalized Rokhsar-Kivelson Hamiltonian at…

The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)Lax)3Ir2O7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a…

The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…

We report ab-plane Hall Effect and magnetoresistivity measurements on La2-xCexCuO4 thin films as a function of doping for magnetic fields up to 14T and temperatures down to 1.8K. A dramatic change in the low temperature (1.8 K) normal state…

Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides, Pr_{1-x}Ca_xVO_3, Nd_{1-x}Sr_xVO_3 and Y_{1-x}Ca_xVO_3, with perovskite structure. The increase…

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two…

The magnetic and electronic properties of trilayer La4Ni3O8, similar to hole doped cuprates, are investigated by performing full-potential linearized augmented plane wave method-based spin-polarized calculations with LDA and GGA functionals…

Based on the Hubbard model of strongly correlated systems, a reduction in the bandwidth of the electrons can yield a substantial change in the properties of the material. One method to modify the bandwidth is geometrically confined doping,…

The spectral properties of a one-dimensional (1D) single-chain Mott insulator Sr$_2$CuO$_{3}$ have been studied in angle-resolved photoemission and optical spectroscopy, at half filling and with small concentrations of extra charge doped…

We fabricated high-mobility {\delta}-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the…