Related papers: Modulation Doping of a Mott Quantum Well by a Prox…
We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the…
Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…
The role of polariton-electron scattering on the performance characteristics of an electrically injected GaAs-based quantum well microcavity diode in the strong coupling regime has been investigated. An electron gas is introduced in the…
La0.7Ce0.3MnO3 is a relatively new addition in the family of colossal magnetoresistive manganites where the cerium ion is believed to be in the Ce4+ state. In this paper we report an extensive study the magnetotransport properties of laser…
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…
The transfer of electrons between a solid surface and adsorbed atomic or molecular species is fundamental in natural and synthetic processes, being at the heart of most catalytic reactions and many sensors. In special cases, metallic…
We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic…
Charge transport in the hole-doped quasi-1D model system Y$_{2-x}$Ca$_x$BaNiO$_5$ (x $ leq$ 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dependence is characterized by a constant activation energy…
We investigate the nature of the electronic ground state and electron-lattice couplings for doped chains of CuO_4 plaquettes or CuO_6 octahedra. The undoped configuration implies here Cu 3d^9 and O 2p^6 formal valence states. The results of…
In this report, we identify the origin of the temperature dependence of the surface energy gap in impurity-doped topological insulators. The gap at the Dirac point and its variation with temperature were studied by using angle-resolved…
Recently, hole-doped superconducting cuprates with the T'-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced…
The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive…
YTiO3, as a prototypical Mott insulator, has been the subject of numerous experimental investigations of its electronic structure. The onset of absorption in optical conductivity measurements has generally been interpreted to be due to…
Doping of a Mott insulator gives rise to a wide variety of exotic emergent states, from high-temperature superconductivity to charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major…
We present an inelastic neutron scattering study of the low energy crystal-field excitations in the lightly doped cobalt perovskite La_0.998Sr_0.002CoO_3. In contrast to the parent compound LaCoO_3 an inelastic peak at energy transfer ~0.75…
We have studied the chemical potential shift in La(1-x)Sr(x)MnO(3) as a function of doped hole concentration by core-level x-ray photoemission. The shift is monotonous, which means that there is no electronic phase separation on a…
Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by…
The calculation of the optical properties of doped semiconductor quantum wells is an intricate many-body problem because of the dynamical response of the excess carriers to the photogenerated valence band hole. At low densities, however,…
A mean field calculation of the $T\to 0$ limit of the Hall conductance of electron-doped cuprates such as $Pr_{2-x}Ce_xCuO_{4+\delta}$ is presented. The data are found to be qualitatively consistent with the reconstruction of the Fermi…
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide…