Related papers: The microscopic study of a single hydrogen-like im…
We calculate the screening charge density distribution due to a point charge, such as that of a positive muon ($\mu^+$), placed between the planes of a highly anisotropic layered metal. In underdoped hole cuprates the screening charge…
Muon-based accelerators have the potential to enable facilities at both the Intensity and the Energy Frontiers. Muon storage rings can serve as high precision neutrino sources, and a muon collider is an ideal technology for a TeV or…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
The spin-charge gauge approach to consider the metal-insulator crossover (MIC) and other anomalous transport properties in High-T$_c$ cuprates is briefly reviewed. A U(1) field gauging the global charge symmetry and an SU(2) field gauging…
The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body \emph{ab initio} methods accounting for environmental screening…
Holes confined in semiconductor nanostructures realize qubits where the quantum mechanical spin is strongly mixed with the quantum orbital angular momentum. The remarkable spin-orbit coupling allows for fast all electrical manipulation of…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Graphene nanostructures can be engineered with atomic precision to display customized electronic states with application in spintronics or quantum technologies. In order to take advantage of their full potential, their charge and spin state…
We investigate the interaction of two Mn ions in the dilute magnetic semiconductor GaMnAs using the variational envelope wave function approach within the framework of six band model of the valence band. We find that the effective…
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of…
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field…
We study the Green's function of a gauge invariant fermionic operator in a strongly coupled field theory at nonzero temperature and density using a dual gravity description. The gravity model contains a charged black hole in four…
Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently…
Nambu-Goldstone theorem provides gapless modes to both relativistic and nonrelativistic systems. The Nambu-Goldstone bosons in insulating magnets are called magnons or spin-waves and play a key role in magnetization transport. We review…
The study on the electronic state of muon as pseudo-hydrogen (represented by the elemental symbol Mu) has long been appreciated as one of the few methods to experimentally access the electronic state of dilute hydrogen (H) in semiconductors…
We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show…
We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the…
The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for…
Properties of some few-body systems which include one positively charged muon $\mu^{+}$ and two electrons $e^{-}$ are discussed. In particular, we consider the negatively charged muonium ion Mu$^{-}$ (or $\mu^{+} e^{-}_{2}$) and four-body…