Coherent Population Trapping of Electron Spins in a Semiconductor
Mesoscale and Nanoscale Physics
2009-11-11 v2 Quantum Physics
Abstract
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.
Cite
@article{arxiv.cond-mat/0504012,
title = {Coherent Population Trapping of Electron Spins in a Semiconductor},
author = {Kai-Mei C. Fu and Charles Santori and Colin Stanley and M. C. Holland and Yoshihisa Yamamoto},
journal= {arXiv preprint arXiv:cond-mat/0504012},
year = {2009}
}
Comments
5 pages, 4 figures replaced 6/25/2007 with PRL version