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The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…

Mesoscale and Nanoscale Physics · Physics 2015-07-15 Jing Wang , Biao Lian , Shou-Cheng Zhang

The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…

Disordered Systems and Neural Networks · Physics 2007-05-23 Yu. V. Tarasov

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…

Mesoscale and Nanoscale Physics · Physics 2017-11-30 Rafael Sánchez , Holger Thierschmann , Laurens W. Molenkamp

We use a self-consistent method to study the current of the single molecular transistor modulated by the transverse gate-bias in the level of the first-principles calculations. The numerical results show that both the polyacene-dithiol…

Materials Science · Physics 2009-11-11 F. Jiang , Y. X. Zhou , H. Chen , R. Note , H. Mizuseki , Y. Kawazoe

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical…

We derive an explicit expression for the quantum conductivity of a molecular wire containing a redox center, which is embedded in an electrochemical environment. The redox center interacts with the solvent, and the average over the solvent…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 A. V. B. Cruz , A. K. Mishra , W. Schmickler

Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a…

Materials Science · Physics 2012-05-08 Wei Dou , Qing Wan , Jie Jiang , Liqiang Zhu , Qing Zhang

A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain…

Atomic Physics · Physics 2016-02-17 Seth C. Caliga , Cameron J. E. Straatsma , Alex A. Zozulya , Dana Z. Anderson

The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…

Applied Physics · Physics 2021-05-11 Michael Mastro , Marko J. Tadjer , Jihyun Kim , Fan Ren , Stephen J. Pearton

We present an {\it ab initio} analysis of electron conduction through a $C_{60}$ molecular device. Charge transfer from the device electrodes to the molecular region is found to play a crucial role in aligning the lowest unoccupied…

Condensed Matter · Physics 2009-10-31 Jeremy Taylor , Hong Guo , Jian Wang

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused…

Strongly Correlated Electrons · Physics 2013-08-05 You Zhou , Shriram Ramanathan

The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated…

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…

Mesoscale and Nanoscale Physics · Physics 2008-02-20 Hanan Dery , Lukasz Cywinski , Lu J. Sham

We report on the transition from magnetic edge to electric edge transport in a split magnetic gate device which applies a notch magnetic field to a two-dimensional electron gas. The gate bias allows tuning the overlap of magnetic and…

Mesoscale and Nanoscale Physics · Physics 2017-08-09 Alain Nogaret , Puja Mondal , Ankip Kumar , Sankalpa Ghosh , Harvey Beere , David Ritchi

In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance…

Mesoscale and Nanoscale Physics · Physics 2023-05-24 Biswajit Pabi , Jakub Šebesta , Richard Korytár , Oren Tal , Atindra Nath Pal

We Have developed the concept of a new kind of single-electron transistor in which the transport of the electron through a quantum wire is controlled by charged quantum rings. Using a 2D harmonic potential as the transverse constraint, we…

Mesoscale and Nanoscale Physics · Physics 2016-10-24 Ali Hosseinzadeh , Shahpoor Saeidian

Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic…

Mesoscale and Nanoscale Physics · Physics 2019-02-22 Sucheta Mondal , Saswati Barman , Anjan Barman

The possibility of electron beam guiding is theoretically explored on the surface of a topological insulator through the proximity interaction with a magnetic material. The electronic band modification induced by the exchange coupling at…

Mesoscale and Nanoscale Physics · Physics 2015-06-17 Xiaodong Li , Ki Wook Kim

In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented.…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Morteza Erfani , David G. Hasko , Alessandro Rossi , Wan Sik Cho , Jung-Bum Choi

The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Liangbin Hu , Ju Gao , Shun-Qing Shen