Related papers: InAs-GaSb laser: Prospects for efficient THz emiss…

: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…

We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…

It should be possible to improve hot-hole laser performance by moving from bulk materials to a quantum well structure. The extra design parameters enable us to alter the band structure by changing the crystal orientation of the growth…

A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological…

We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs…

We develop the microscopic theory of a terahertz (THz) laser based on the effects of resonant tunneling in a double quantum well heterostructure embedded in both optical and THz cavities. In the strong coupling regime the system hosts…

We present a study of the nonlinear intersubband (ISB) response of conduction electrons in a GaAs/AlGaAs quantum well to strong THz radiation, using a density-matrix approach combined with time-dependent density-functional theory. We…

Terahertz (THz) lasers on optically pumped multiple-graphene-layer (MGL) structures as their active region are proposed and evaluated. The developed device model accounts for the interband and intraband transitions in the degenerate…

We present a two-quantum well THz intersubband laser operating up to 192 K. The structure has been optimized with a non-equilibrium Green's function model. The result of this optimization was confirmed experimentally by growing, processing…

Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…

We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled…

We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 {\mu}m. They employ a hybrid cladding architecture with the same geometry and inner claddings…

This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP…

We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can…

Following the success of p-Ge hot-hole lasers, there is also potential for using other semiconductor materials, notably III-V's such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and…

We analyze the modification of the intersubband absorption of electrons in quantum wells under intense THz irradiation. An expression for the induced current is obtained, based on the adiabatic approach and the resonant approximation. We…

We investigate triple V-shaped type-II quantum wells designed to emit at 6-9 {\mu}m wavelength range, consisting of three InAs(Sb) electron quantum wells and two Ga0.6In0.4Sb hole quantum wells. The wells' composition and thicknesses are…

We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on…

Electric dipole transitions between different cavity polariton branches or between dressed atomic states with the same excitation number are strictly forbidden in centro-symmetric systems. For doped quantum wells in semiconductor…

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band…