Related papers: InAs-GaSb laser: Prospects for efficient THz emiss…
A novel method is presented for generating radiation using the beat wave associated with a bi-frequency laser pulse, to excite plasma oscillations in a plasma slab with a density gradient. By resonantly exciting a plasma wave, it can be…
We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to…
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…
Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use…
In the widely-studied two-color laser scheme for terahertz (THz) radiation from a gas, the frequency ratio of the two lasers is usually fixed at $\omega_2/\omega_1=$1:2. We investigate THz generation with uncommon frequency ratios. Our…
Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
We describe a controllable and precise laser tweezers for Bose-Einstein condensates of ultracold atomic gases. In our configuration, a laser beam is used to locally modify the sign of the scattering length in the vicinity of a trapped BEC.…
Intersubband (ISB) transitions in semiconductor multi-quantum well (MQW) structures are promising candidates for the development of saturable absorbers at terahertz (THz) frequencies. Here, we exploit amplitude and phase-resolved…
Two-level systems (TLS) in native Nb and Ta oxides limit superconducting-qubit coherence and SRF-cavity quality factors in the microwave frequency range, yet their microscopic origin remains unclear. We combine MLIP-accelerated sampling of…
We consider theoretically THz lasing in a system consisting of a quantum well placed inside an optical microcavity and a THz cavity in the regime of two-photon excitation of 2p dark exciton states. The stability of the system with varying…
We propose novel hybrid beamforming schemes for the terahertz (THz) wireless system where a multi-antenna base station (BS) communicates with a multi-antenna user over frequency selective fading. Here, we assume that the BS employs…
The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven…
A new mechanism for exciton lasing in ZnSe/ZnCdSe quantum wells is proposed. Lasing, occurring below the lowest exciton line, may be associated with a BCS-like condensed (coherent) exciton state. This state is most stable at low…
We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The emergence of topological and normal insulating…
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre…
A new scheme of the THz light source is proposed. The excitation of the Langmuir wave in a moderately relativistic electron beam via the two-stream instability and the subsequent interaction of the excited Langmuir wave with the visible…
Using optical technology for current injection and electromagnetic emission simplifies the comparison between materials. Here, we inject current into monolayer graphene and bulk gallium arsenide (GaAs) using two-color quantum interference…
We develop a quantum model for the calculation of the gain of phonon-polariton intersubband lasers. The polaritonic gain arizes from the interaction between the electrons confined in a quantum well structure and the phonon confined in one…
This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been…