Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. These high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the global and space spectra, respectively, which are higher than previous record six-junction devices.
@article{arxiv.2203.15593,
title = {Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices},
author = {Ryan M. France and John F. Geisz and Tao Song and Waldo Olavarria and Michelle Young and Alan Kibbler and Myles A. Steiner},
journal= {arXiv preprint arXiv:2203.15593},
year = {2022}
}