Related papers: Electrical spin injection and detection in lateral…
It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and…
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
In this work, we study the conductance and the thermoelectric properties of a quantum dot embedded between two metallic leads with a side-coupled triple quantum dot molecule under a magnetic field. We focus on the spin polarization and…
We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a…
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected…
We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
An L-shaped strained n-InGaAs channel is used to polarize and subsequently rotate electron spins solely by means of electric fields. Precession of electrically-excited spins in the absence of applied magnetic fields is directly observed by…
We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…
Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a…
Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric field pulses can be utilized for phase-coherent +/- pi spin rotation of optically generated electron spin…
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We propose and demonstrate a new method to probe local spin polarization in semiconductor micro devices at low and zero magnetic fields. By connecting a single-lead quantum dot to a semiconductor micro device and monitoring electron…
Unlike the two-terminal device, in which the time-reversal invariant spin-orbit interaction alone cannot polarize the spins, such a polarization can be generated when electrons from one source reservoir flow into two (or more) separate…
The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in…