Related papers: Electrical spin injection and detection in lateral…

Using an ultra sensitive magneto-optical Kerr rotation setup we have observed electrical spin injection from (Zn,Mn)Se into bulk GaAs and quantified the spin injection efficiency. The current induced contribution was carefully separated…

Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…

The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field.…

Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the…

A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…

We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…

Pure spin currents are measured in micron-wide channels of GaAs two-dimensional electron gas (2DEG). Spins are injected and detected using quantum point contacts, which become spin polarized at high magnetic field. High sensitivity to the…

The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effect has been reported to be more energy efficient than the…

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density…

A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer…

We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…

Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge…

A spin filtering device using quantum spin interference is theoretically proposed in a GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit couplings. The device achieves polarized electron currents by separating spin up…

In order to enhance spin injection efficiency from ferromagnetic (FM) metal into a two-dimensional electron gas (2DEG), we introduce another FM metal and two tunnel barriers (I) between them to investigate the current polarization in such…

The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the…

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…

We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…

We report the successful extraction of spin polarized current from the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x (x~2, TCNE: tetracyanoethylene; TC ~ 400 K, EG ~ 0.5 eV, s ~ 10-2 S/cm) and its subsequent injection…

Spin valve ultrafast spin injection devices are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized electrons from one ferromagnet to another through a…

We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in…