Related papers: Auger-mediated radiative recombination in three-di…
We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and…
Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of…
In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct…
We study binary and the recently discovered process of ternary He-assisted recombination of H3+ ions with electrons in a low temperature afterglow plasma. The experiments are carried out over a broad range of pressures and temperatures of…
High harmonic generation (HHG) in solids reflects the underlying nonperturbative nonlinear dynamics of electrons in a strong light field and is a powerful tool for ultrafast spectroscopy of electronic structures. Photo-carrier doping allows…
We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
We investigated the nanosecond-scale time decay of the blue-green light emitted by nominally pure SrTiO$_3$ following the absorption of an intense picosecond laser pulse generating a high density of electron-hole pairs. Two independent…
It is shown that 532 nm and 1064 nm laser photoexcitation of trapped electrons generated by 355 nm photolysis of aqueous titania (TiO2) nanoparticles causes rapid photobleaching of their absorbance band in the visible and near IR. This…
A mechanism of the condensation of e-h pairs in bulk GaAs at room temperature, which has been observed earlier, is proposed. The point is that the photon assisted pairing happens in a system of electrons and holes that occupy energy levels…
We introduce a two-fluid mobility model incorporating fundamental aspects of electron-hole (e-h) scattering such as momentum conservation for simulating laser-driven semiconductor switches (LDSSs). Compared to previous works that use…
We devise an ab initio formalism for the quantum dynamics of Auger decay by laser-dressed atoms which are inner-shell ionized by extreme ultraviolet (XUV) light. The optical dressing laser is assumed to be sufficiently weak such that…
The electron-hole liquid, which features a macroscopic population of correlated electrons and holes, may offer a path to room temperature semiconductor devices that harness collective electronic phenomena. We report on the gas-to-liquid…
We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a…
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si…
Time-resolved terahertz spectroscopy is used to investigate formation and ultrafast long-distance propagation of electron-hole plasma in strongly photoexcited GaAs and InP. The observed phenomena involve fundamental interactions of…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…
We report ultrafast surface pump and interface probe experiments on photoexcited carrier transport across single crystal bismuth films on sapphire. The film thickness is sufficient to separate carrier dynamics from lattice heating and…
Shallow hole-doping in small diameter single-wall carbon nanotubes by H$_2$O$_2$ is shown to result in delocalized excited state quenching with no effects on the ground state absorption spectrum. To account for this process, the…
A calculation of the high-harmonic generation (HHG) in $\alpha$-quartz using the time-dependent density functional theory is reported. The inter-band process is attributed to the dominant in HHG above the band gap. The photon energy is set…