Related papers: Auger-mediated radiative recombination in three-di…
This paper continues our study of the behaviour of near infrared helium recombination lines in planetary nebula. We find that the 1.7007um 4^3D-3^3P HeI line is a good measure of the HeI recombination rate, since it varies smoothly with the…
Exciton-exciton annihilation (EEA) and Auger recombination are detrimental processes occurring in semiconductor optoelectronic devices at high carrier densities. Despite constituting one of the main obstacles for realizing lasing in…
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible…
Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and…
CrN/MgO(111) multilayers modeled via \textit{ab initio} calculations give rise to nanoscale, scalable, spatially separated two-dimensional electron and hole gases (2DEG+2DHG), each confined to its own CrN interface. Due to the Cr $3d^3$…
We propose a method to overcome Auger recombination in nanocrystal quantum dot lasers using cavity-enhanced spontaneous emission. We derive a numerical model for a laser composed of nanocrystal quantum dots coupled to optical nanocavities…
We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature.…
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic…
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we…
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of…
Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic…
Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in…
In halide perovskites, electrons (holes) exist as electronic (hole) polarons, excitons, free and trapped electrons (holes). Six kinds of collisions could lead to annihilation of electron and hole, three of them involve polaron(s). In the…
Electron-hole generation and recombination rates for plasmon emission and absorption in Graphene are presented. The recombination times of carriers due to plasmon emission have been found to be in the tens of femtoseconds to hundreds of…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
We investigate the charge re-distribution upon optical excitation of various necked homodimer CQDMs using single particle emission spectroscopy. By tuning the hybridization of the electron wavefunction at a fixed center-to-center distance…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence…
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…
Recent spectroscopic models of active galactic nuclei (AGN) have indicated that the recommended electron-ion recombination rate coefficients for iron ions with partially filled M-shells are incorrect in the temperature range where these…