Related papers: Low-field quantum Hall transport in an electron Fa…
We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak…
We present a current and charge conserving theory for the low frequency admittance of a two-dimensional electron gas connected to ideal metallic contacts and subject to a quantizing magnetic field. In the framework of the edge-channel…
The magnetotransport behaviour inside the nematic phase of bulk FeSe reveals unusual multiband effects that cannot be reconciled with a simple two-band approximation proposed by surface-sensitive spectroscopic probes. In order to understand…
We use magneto-transport measurements to investigate the electronic structure of WTe2 single crystals. A non-saturating and parabolic magnetoresistance is observed in the temperature range between 2.5 to 200 K and magnetic fields up to 8 T.…
Pulsed field measurements of the Hall resistivity and magnetoresistance of underdoped YBa2Cu4O8 are analyzed self-consistently using a simple model based on coexisting electron and hole carriers. The resultant mobilities and Hall numbers…
Quantized Hall conductance and de Haas van Alphen (dHvA) oscillation are studied theoretically in the tight-binding model for (TMTSF)$_2$NO$_3$, in which there are small pockets of electron and hole due to the periodic potentials of anion…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the order of the magnetic length possess a complex Landau band structure in the vicinity of the line junction. The energy dispersion is obtained…
We report experiments in a large, 2.5 micron diameter Fabry-Perot quantum Hall interferometer with two tunneling constrictions. Interference fringes are observed as conductance oscillations as a function of applied magnetic field (the…
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…
We analyze the magnetic field and gate voltage dependence of the longitudinal resistance in an integer quantum Hall Fabry-P\'{e}rot interferometer, taking into account the interactions between an interfering edge mode, a non-interfering…
We investigate the magneto-transport properties of electrons on a square lattice under a magnetic field with the alternate flux strength $\phi\pm\Delta\phi$ in neighboring plaquettes. A new peculiar behavior of the Hall conductance has been…
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…
We present a microscopic picture of quantum transport in quantum antidots in the quantum Hall regime taking electron interactions into account. We discuss the edge state structure, energy level evolution, charge quantization and…
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the…
We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at \nu=7/2 in the second Landau level. We…
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at…
We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport…