Related papers: Quantum Well Based on Graphene and Narrow-Gap Semi…
We investigate a planar heterostructure composed of two graphene films separated by a narrow-gap semiconductor ribbon. We show that there is no the Klein paradox when the Dirac points of the Brillouin zone of graphene are in a band gap of a…
Spin-magnetophonon level splitting in a quantum well made of a semimagnetic wide gap semiconductor is considered. The semimagnetic semiconductors are characterized by a large effective $g$ factor. The resonance conditions $\hbar\omega_{\rm…
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in…
We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use…
A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as…
Owing to their wide tunability, spin- and valley internal degrees of freedom, and low disorder, graphene heterostructures are emerging as a promising experimental platform for fractional quantum Hall (FQH) studies. Surprisingly, however,…
Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical…
Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of…
We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. This device had excess n type doping and as a result. The…
For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the…
The results of tunnelling studies of the energy spectrum of two-dimensional (2D) states in a surface quantum well in a semiconductor with inverted band structure are presented. The energy dependence of quasimomentum of the 2D states over a…
We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…
We theoretically analyze the energy spectrum of a quantum ring in AA-stacked bilayer graphene with radius $R$ for a zero width subjected to a perpendicular magnetic field $B$. An analytical approach, using the Dirac equation, is implemented…
Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed…
We examine a graphene quantum dot formed by combining an electric and a uniform magnetic field. The electric field creates a smooth quantum well potential while the magnetic field induces an exponential tail to the dot states. The states…
The three-dimensional nonlinear dynamics of an electron gas in a semiconductor quantum well is analyzed in terms of a self-consistent fluid formulation and a variational approach. Assuming a time-dependent localized profile for the fluid…
We employ magnetocapacitance and far-infrared spectroscopy techniques to study the spectrum of the double-layer electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. For gate-bias-controlled asymmetric…
Graphene on a substrate has been shown to exhibit a transition, depending on the substrate material, from a zero-gap semiconductor state to a semimetallic state. The ground-state energy of the electron (hole) gas has been calculated within…
We show that it is possible to realize significant nonlinear optical interactions at the few photon level in graphene nanostructures. Our approach takes advantage of the electric field enhancement associated with the strong confinement of…
The results of an experimental study of the energy spectrum of the valence band in a HgTe quantum well of width d<6.3 nm with normal spectrum in the presence of a strong spin-orbit splitting are reported. The analysis of the temperature,…