Related papers: Observation of half-integer quantum Hall effect in…
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes…
Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
We performed thermoelectric Hall conductivity $\alpha_{xy}$ measurements on single-crystal graphite in the quantum limit up to 13 T. Both electrical and thermoelectric transport measurements were performed on the same crystal to extract…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…
We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange-coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ~0.09(2e2/h) at low…
We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly…
We investigate the fractional quantum anomalous Hall (FQAH) effect in rhombohedral multilayer graphene (RnG) in the presence of a strong applied displacement field. We first introduce the interacting model of RnG, which includes the…
The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $\nu=-2$ to $\nu=0$. The value of the…
The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density…
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and…
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…
We consider the problem of magnetic charges in $(2+1)$ dimensions for a torus geometry in real-space, subjected to an inverted Lorentz force due to an external electric field applied normal to the surface of the torus. We compute the Hall…