Related papers: Observation of half-integer quantum Hall effect in…
When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids…
These lecture notes yield an introduction to quantum Hall effects both for non-relativistic electrons in conventional 2D electron gases (such as in semiconductor heterostructures) and relativistic electrons in graphene. After a brief…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…
We report a theoretical investigation of quantized spin-Hall conductance fluctuation of graphene devices in the diffusive regime. Two graphene models that exhibit quantized spin-Hall effect (QSHE) are analyzed. Model-I is with unitary…
Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite…
The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
The quantum Hall effect (QHE), which was observed in 2D electron gas under an external magnetic field, stands out as one of the most remarkable transport phenomena in condensed matter. However, a long standing puzzle remains regarding the…
We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation…
We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K…
Extensive fractional quantum Hall effect (FQHE) has been observed in graphene-based materials. Some of the observed fractions are anomalous in that FQHE has not been established at these fractions in conventional GaAs systems. One such…
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by…
Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science…
We examine the photonic spin Hall effect (SHE) in a graphene-substrate system with the presence of external magnetic field. In the quantum Hall regime, we demonstrate that the in-plane and transverse spin-dependent splittings in photonic…
We report on transport measurements of the insulating state that forms at the charge neutrality point of graphene in a magnetic field. Using both conventional two-terminal measurements, sensitive to bulk and edge conductance, and Corbino…