Related papers: GaN/AlN Quantum Dots for Single Qubit Emitters
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with…
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon…
Computational studies based on 6 band k$\cdot$p theory are employed on lens-shaped III-nitride quantum dots (QDs) with focus on the polarization properties of the optical interband transitions. The results predict pronounced linear…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…
We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD…
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in nonpolar, semipolar and polar crystal regions. All three quantum dot…
We propose a new method of generating triggered entangled photon pairs with wavelength on demand. The method uses a micro-structured semiconductor-piezoelectric device capable of dynamically reshaping the electronic properties of…
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is…
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
Two-photon transition rates are investigated in resonance to the ground state in wurtzite GaN/AlN quantum dots. The ground state transition is two-photon allowed because of the electron-hole separation inherent to polar wurtzite III-nitride…
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to…
Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated…
The electronic and optical properties of self-assembled InN/GaN quantum dots (QDs) are investigated by means of a tight-binding model combined with configuration interaction calculations. Tight-binding single particle wave functions are…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic…
A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field…