Related papers: Single-valley high-mobility (110) AlAs quantum wel…
Electron-like carriers in bismuth are described by the Dirac Hamiltonian, with a band mass becoming a thousandth of the bare electron mass along one crystalline axis. The existence of three anisotropic valleys offers electrons an additional…
The experimental results obtained for the magneto-transport in the InGaAs/InAlAs double quantum wells (DQW) structures of two different shapes of wells are reported. The beating-effect occurred in the Shubnikov-de Haas (SdH) oscillations…
The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature range between 175 K and 300 K. Upon cooling from room temperature to 175 K the…
We report on recent experimental results from transport measurements with large Hall bars made of high mobility GaAs/AlGaAs heterostructures. Thermally activated conductivities and hopping transport were investigated in the integer quantum…
In a recent letter M. Lilly et al [PRL 82, 394 (1999)] have shown that a highly anisotropic state can arise in certain two dimensional electron systems. In the large square samples studied, resistances measured in the two perpendicular…
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has…
We study the role of anisotropy on the transport properties of composite fermions near Landau level filling factor $\nu=1/2$ in two-dimensional holes confined to a GaAs quantum well. By applying a parallel magnetic field, we tune the…
We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At…
We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing…
High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly…
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature…
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…
We report on transport signatures of eight distinct bubble phases in the $N=3$ Landau level of a Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum well with $x = 0.0015$. These phases occur near partial filling factors $\nu^\star…
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…
We recently reported [PRL 82, 394 (1999)] large transport anisotropies in a two-dimensional electron gas in high Landau levels. These observations were made utilizing both square and Hall bar sample geometries. Simon recently commented…
Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3 (STO) have been created using Ar+-irradiation with fully metallic behavior and low-temperature-mobility as large as 5500 cm2V-1s-1, 1300 cm2V-1s-1 and 8600 cm2V-1s-1…
By means of electronic transport, we study the transverse magnetic anisotropy of an individual Fe$_4$ single-molecule magnet (SMM) embedded in a three-terminal junction. In particular, we determine in situ the transverse anisotropy of the…
We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…