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Related papers: Oxygen-related traps in pentacene thin films: Ener…

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We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Fabian Meier , Kurt Mattenberger , Bertram Batlogg

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

Understanding charge transport in organic semiconductors in large electric fields is relevant to many applications. We present transport measurements in organic field-effect transistors based on poly(3-hexylthiophene) and…

Materials Science · Physics 2010-03-09 J. H. Worne , J. E. Anthony , D. Natelson

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in…

Materials Science · Physics 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Kohei Fujiwara , Keiji Ueno , Toshihiro Shimada , Koichiro Saiki

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected…

Materials Science · Physics 2010-02-08 Wolfgang L. Kalb , Bertram Batlogg

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect…

Materials Science · Physics 2015-05-18 E. G. Bittle , J. W. Brill , J. E. Anthony

We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…

Materials Science · Physics 2025-09-24 Dean Kos , Marta Mas-Torrent

The trap distribution in the conjugated polymer poly(3-hexylthiophene) was investigated by fractional thermally stimulated current measurements. Two defect states with activation energies of about 50 meV and 105 meV and Gaussian energy…

Materials Science · Physics 2008-10-21 Julia Schafferhans , Andreas Baumann , Carsten Deibel , Vladimir Dyakonov

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…

Materials Science · Physics 2015-05-28 Roger Häusermann , Bertram Batlogg

We present measurements of the transient photoconductivity in pentacene single crystals using optical-pump THz-probe spectroscopy. We have measured the temperature and fluence dependence of the mobility of the photoexcited charge carriers…

Condensed Matter · Physics 2016-01-26 V. K. Thorsmolle , R. D. Averitt , X. Chi , D. J. Hilton , D. L. Smith , A. P. Ramirez , A. J. Taylor

Typically, amorphous organic materials contain high density of traps. Traps hinder charge transport and, hence, affect various working parameters of organic electronic devices. In this paper we suggest a simple but reliable method for the…

Materials Science · Physics 2013-03-21 S. V. Novikov , A. R. Tameev , A. V. Vannikov , J. -M. Nunzi

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the…

Materials Science · Physics 2015-06-25 M. F. Calhoun , C. Hsieh , V. Podzorov

We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor…

Other Condensed Matter · Physics 2009-11-11 H. Houili , J. D. Picon , M. N. Bussac , L. Zuppiroli

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…

Materials Science · Physics 2015-05-18 Wolfgang L. Kalb , Simon Haas , Cornelius Krellner , Thomas Mathis , Bertram Batlogg

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface.…

Mesoscale and Nanoscale Physics · Physics 2016-01-11 Yuhan Zhang , Jingsi Qiao , Si Gao , Fengrui Hu , Daowei He , Bing Wu , Ziyi Yang , Bingchen Xu , Yun Li , Yi Shi , Wei Ji , Peng Wang , Xiaoyong Wang , Min Xiao , Hangxun Xu , Jian-Bin Xu , Xinran Wang

Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…

Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…

Strongly Correlated Electrons · Physics 2007-05-23 Jin Gyu Park , Relja Vasic , James S. Brooks , John E. Anthony

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The…

Condensed Matter · Physics 2009-10-31 M. C. J. M. Vissenberg , M. Matters

Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2…

Materials Science · Physics 2015-05-13 F. V. Di Girolamo , C. Aruta , M. Barra , P. D Angelo , A. Cassinese
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