Related papers: Dynamics of Photo-excited Spins in InSb Based Quan…
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in an individual semiconductor quantum dot. The statistics of the photons emitted by the quantum dot reflect the quantum fluctuations of the…
The electrodynamic response of organic spin liquids with highly-frustrated triangular lattices has been measured in a wide energy range. While the overall optical spectra of these Mott insulators are governed by transitions between the…
The energy relaxation in the spin-polarized disordered electron systems is studied in the diffusive regime. We derived the quantum kinetic equation in which the kernel of electron-electron collision integral explicitly depends on the…
The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals…
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation…
Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70…
Doping dependence of the spin fluctuations and the electron correlations in the effective five-band Hubbard model for iron pnictides is investigated using the fluctuation-exchange approximation. For a moderate hole doping, we find a…
Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by…
InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process…
Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr…
In Mott insulators the evolution of antiferromagnetic order to superconducting or charge-density-wave-like states upon chemical doping underpins the control of quantum phases. Photo-doping can induce similar transitions on the ultrafast…
Using a nonequilibrium implementation of the extended dynamical mean field theory (EDMFT) we simulate the relaxation after photo excitation in a strongly correlated electron system with antiferromagnetic spin interactions. We consider the…
We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping…
We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity,…
Spin dynamics of optically excited electrons confined in asymmetric coupled quantum wells are investigated through time resolved Faraday rotation experiments. The inter-well coupling is shown to depend on applied electric field and barrier…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
We study the doping evolution of spin excitations in a 1D Hubbard model and its downfolded spin Hamiltonians, by using exact diagonalization combined with cluster perturbation theory. In all models, we observe hardening (softening) of spin…
We present a nonperturbative method for deriving a quasiparticle description of the low-energy excitations in the t-J model for strongly correlated electrons. Using the exact diagonalization technique we evaluated exactly the spectral…