Related papers: Disorder Effects in the Quantum Hall Effect of Gra…
A disorder-averaged Hartree-Fock treatment is used to compute the density of single particle states for quantum Hall systems at filling factor $\nu=1$. It is found that transport and spin polarization experiments can be simultaneously…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…
Recent quantum Hall experiments conducted on disordered graphene pn junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums' resistances. However in the ballistic limit, theory…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…
We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction…
Near the superconducting phase transition, fluctuations significantly modify the electronic transport properties. Here we study the fluctuation corrections to the Hall conductivity in disordered films, extending previous derivations to a…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature and gate voltage dependences of the perpendicular and parallel…
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge…
The observed quantization of the Hall conductivity in graphene at high magnetic fields is explained as being due to the dynamically generated spatial modulation of either the electron spin or the density, as decided by the details of…
We study both the continuous model and the discrete model of the integer quantum Hall effect on the hyperbolic plane in the presence of disorder, extending the results of an earlier paper [CHMM]. Here we model impurities, that is we…
We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We investigate the influence of the superconducting (S) proximity effect in the quantum Hall (QH) regime by computing the charge conductance flowing through a graphene-based QH/S/QH junction. This situation offers the exciting possibility…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
We predict the existence of a three dimensional quantum Hall effect plateau in a graphite crystal subject to a magnetic field. The plateau has a Hall conductivity quantized at $\frac{4e^2}{\hbar} \frac{1}{c_0} $ with $c_0$ the c-axis…
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…
Strong Goos-H\"anchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. Based on the full quantum description of the temperature-dependent surface conductivity of graphene present in the…