Related papers: Temperature dependence of ambipolar diffusion in s…
he frequency dependence in the mid IR from 900 to 1100 cm$^{-1}$ and far IR at 84 cm$^{-1}$ and temperature dependence from 35 to 330 K of the normal state Hall transport is reported in single crystal, optimally doped…
Infrared absorption measurements in the range of 125 to 700 cm^(-1) have been carried out as a function of temperature upto 5 K in MgB2. The absorption spectrum is characterised by a broad band centred at 485 cm^{-1}, with shoulders at 333…
The temperature of a circumbinary disc edge should undulate due to variations in illumination as a function of binary orbital phase. We explore circumbinary disc temperature variations as a source of broad-band infrared light curve…
The heat-carrying acoustic excitations of amorphous silicon are of interest because their mean free paths may approach micron scales at room temperature. Despite extensive investigation, the origin of the weak acoustic damping in the…
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
Electron-hole pairs in semiconductors are essential for solar cells and fast electronic circuitry, but the competition between carrier transport and relaxation into heat limits the efficiency and speed. Here we use ultrafast electron…
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures,…
Thermal radiation from an unpatterned object is similar to that of a gray body. The thermal emission is insensitive to polarization, shows only Lambertian angular dependence, and is well modeled as the product of the blackbody distribution…
Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…
The pseudo-binary thiospinel system Cu$_{1-x}$Cd$_{x}$Ir$_{2}$S$_{4}$ was investigated by the x-ray diffraction, electrical resistivity, magnetic susceptibility and specific heat measurements. It was shown that the system exhibits a…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
The electromagnetic response of a system with two planes per unit cell involves, in addition to the usual intraband contribution, an added interband term. These transitions affect the temperature dependence and the magnitude of the zero…
Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental…
Upon the excitation by an ultrashort laser pulse the conditions in a material can drastically change, altering its optical properties and therefore the relative amount of absorbed energy, a quan- tity relevant for determining the damage…
The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate ($R$) decreases…
Helium spin echo experiments combined with ab initio-based Langevin molecular dynamics simulations are used to quantify the adsorbate-substrate coupling during the thermal diffusion of Na atoms on Cu(111). An analysis of trajectories within…
We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave…
Regular Einstein relation, connecting the coefficient of ambipolar diffusion and the Dember field with mobilities, is generalized for the case of interacting electron-hole plasma. The calculations are presented for a non-degenerate plasma…
We explore the band dependence of the inferred X-ray temperature of the intracluster medium (ICM) for 192 well-observed galaxy clusters selected from the Chandra Data Archive. If the hot ICM is nearly isothermal in the projected region of…
Injecting charge into dangling bond wires on Si(001) has been shown to induce polarons, which are weakly coupled to the underlying bulk phonons. We present elevated temperature tight binding molecular dynamics simulations designed to obtain…